|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN320N17T2 RDS(on) trr VDSS ID25 = = 170V 260A 5.2m 150ns miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C (Chip Capability) External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C TC = 25C Maximum Ratings 170 170 20 30 260 200 800 100 5 20 1070 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W C C C C C V~ V~ Nm/lb.in. Nm/lb.in. g G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 60A, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 170 2.5 5.0 200 V V nA 50 A 5 mA 5.2 m Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100189(09/09) (c) 2009 IXYS CORPORATION, All Rights Reserved IXFN320N17T2 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 160A Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 100A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 120 190 45 2890 410 1.96 46 170 115 230 640 185 175 0.14 S nF pF pF ns ns ns ns nC nC nC C/W C/W (M4 screws (4x) supplied) SOT-227B (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 100A, VGS = 0V, Note 1 IF = 160A, -di/dt = 100A/s VR = 60V, VGS = 0V 0.53 9.00 Characteristic Values Min. Typ. Max. 320 1280 1.25 150 A A V ns C A Note 1. Pulse test, t 300s; duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN320N17T2 Fig. 1. Output Characteristics @ T J = 25C 320 280 240 VGS = 15V 10V 8V 7V 400 350 300 6V 6V VGS = 15V 10V 7V Fig. 2. Extended Output Characteristics @ T J = 25C ID - Amperes 160 120 5.5V 80 40 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 5V ID - Amperes 200 250 200 150 100 50 0 0 1 2 3 4 5 6 7 5V 5.5V VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 150C 320 280 240 VGS = 15V 10V 7V 3.4 3.0 2.6 6V Fig. 4. RDS(on) Normalized to ID = 160A Value vs. Junction Temperature VGS = 10V ID - Amperes 200 160 120 80 40 0 0.0 0.5 1.0 1.5 2.0 2.5 R DS(on) - Normalized I D = 320A 2.2 1.8 1.4 1.0 0.6 0.2 I D = 160A 5V 4V 3.0 3.5 4.0 -50 -25 0 25 50 75 100 125 150 175 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 160A Value vs. Drain Current 3.4 3.0 2.6 2.2 1.8 1.4 TJ = 25C 1.0 0.6 0 50 100 150 200 250 300 350 400 VGS = 10V Fig. 6. Drain Current vs. Case Temperature 220 200 180 External Lead Current Limit R DS(on) - Normalized TJ = 175C 160 ID - Amperes 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 175 ID - Amperes TC - Degrees Centigrade (c) 2009 IXYS CORPORATION, All Rights Reserved IXFN320N17T2 Fig. 7. Input Admittance 200 180 160 300 140 25C 400 TJ = - 40C 350 Fig. 8. Transconductance g f s - Siemens ID - Amperes 120 100 80 60 40 20 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 TJ = 150C 25C - 40C 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 150C 180 200 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 400 350 300 Fig. 10. Gate Charge 10 9 8 7 VDS = 85V I D = 160A I G = 10mA IS - Amperes VGS - Volts TJ = 150C TJ = 25C 250 200 150 100 50 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100.0 1,000.0 Fig. 12. Forward-Bias Safe Operating Area RDS(on) Limit 25s Capacitance - NanoFarads Ciss 10.0 100.0 External Lead Limit 100s ID - Amperes 10.0 1ms Coss 1.0 1.0 TJ = 175C TC = 25C Single Pulse 10ms 100ms DC f = 1 MHz 0.1 0 5 10 15 20 25 Crss 0.1 30 35 40 1 10 100 1,000 VDS - Volts VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_320N17T2(9V)9-02-09 IXFN320N17T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 380 340 300 RG = 1 , VGS = 10V VDS = 85V I D Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 360 320 RG = 1 , VGS = 10V VDS = 85V 280 = 200A t r - Nanoseconds 260 220 180 I 140 100 25 35 45 55 65 75 85 95 105 115 125 D t r - Nanoseconds 240 200 160 120 TJ = 25C 80 40 0 40 60 80 100 120 140 160 180 200 TJ = 125C = 100A TJ - Degrees Centigrade ID - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 700 240 700 600 500 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 220 tr 600 VDS = 85V td(on) - - - 200 tf VDS = 85V td(off) - - - - TJ = 125C, VGS = 10V RG = 1, VGS = 10V 200 180 160 t d(on) - Nanoseconds t d(off) - Nanoseconds t r - Nanoseconds 500 I D = 200A 160 t f - Nanoseconds 400 300 200 100 0 25 35 45 55 65 75 85 95 105 115 I D = 200A I D = 100A 400 I D = 100A 300 120 140 120 100 80 125 80 200 40 100 1 2 3 4 5 6 7 8 9 10 0 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 700 600 500 220 200 180 800 700 600 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 800 tf VDS = 85V td(off) - - - I D = 200A TJ = 125C, VGS = 10V 700 t d(off) - Nanoseconds 600 500 400 I D = 100A 300 200 100 t d(off) - Nanoseconds t f - Nanoseconds tf 400 300 200 100 0 40 60 VDS = 85V td(off) - - - - RG = 1, VGS = 10V TJ = 125C t f - Nanoseconds 160 140 500 400 300 200 100 1 2 3 4 5 6 7 8 9 10 TJ = 25C 120 100 80 200 80 100 120 140 160 180 ID - Amperes RG - Ohms (c) 2009 IXYS CORPORATION, All Rights Reserved IXFN320N17T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximium Transient Thermal Impedance 0.200 0.100 .sadgsfgsf Z(th)JC - C / W 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_320N17T2(9V)9-02-09 |
Price & Availability of IXFN320N17T2 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |